Memory device having wide area phase change element and...

Details Memory device having wide area phase change element and... Memory device having wide area phase change element and...

2011-06-21

2011-06-21

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S638000, C257SE21068, C257SE29170, C257SE21585, C257SE45002

Reexamination Certificate

active

07964437

ABSTRACT:
A memory cell device of the type that includes a memory material switchable between electrical property states by application of energy, situated between first and second (“bottom” and “top”) electrodes has a top electrode including a larger body portion and a stem portion. The memory material is disposed as a layer over a bottom electrode layer, and a base of the stem portion of the top electrode is in electrical contact with a small area of the surface of the memory material. Methods for making the memory cell are described.

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