Memory device having improved programming operation

Details Memory device having improved programming operation Memory device having improved programming operation

2011-08-02

2011-08-02

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S189110, C365S185270, C365S185030, C365S185050, C365S185190, C365S185230, C365S189160, C365S204000, C365S230060

Reexamination Certificate

active

07990772

ABSTRACT:
Some embodiments include methods and devices having a module and memory cells. The module is configured to reduce the amount of electrons in the sources and drains of the memory cells during a programming operation.

REFERENCES:
patent: 2005/0265078 (2005-12-01), Lee
patent: 2006/0091470 (2006-05-01), Noguchi et al.
patent: 2007/0147131 (2007-06-01), Tran et al.
patent: 2008/0113479 (2008-05-01), Mokhlesi
patent: 2008/0165579 (2008-07-01), Lee
patent: 2008/0183951 (2008-07-01), Lee et al.
patent: 2009/0040832 (2009-02-01), Park
“International Application Serial No. PCT/US2010/026854 , Search Report mailed Jun. 4, 2010”.
“International Application Serial No. PCT/US2010/026854, Written Opinion mailed Jun. 4, 2010”.

Affiliated with

Also associated with

Rating

Memory device having improved programming operation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device having improved programming operation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device having improved programming operation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2709728