Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-04-23
1998-10-27
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518518, 3651852, 365203, 327 56, G11C 1606
Patent
active
058286039
ABSTRACT:
The present invention relates to a bit line clamping scheme for non-volatile memories. The bit line voltage is maintained at a desired voltage level so as to avoid read disturb effects, while being independent of power supply variations and consuming virtually no power. The invention makes practical memory devices which are designed for both high voltage (5 volt) operation and low voltage (3.3 and 2.5 volt) operation.
REFERENCES:
patent: 4799195 (1989-01-01), Iwahashi et al.
patent: 4879682 (1989-11-01), Engles
patent: 4903235 (1990-02-01), Kubota et al.
patent: 4916665 (1990-04-01), Atsumi et al.
patent: 4999812 (1991-03-01), Amin
patent: 5197028 (1993-03-01), Nakai
patent: 5347484 (1994-09-01), Kwong et al.
patent: 5535161 (1996-07-01), Kato
patent: 5559737 (1996-09-01), Tanaka et al.
patent: 5572465 (1996-11-01), Bashir
patent: 5675535 (1997-10-01), Jinbo
Atmel Corporation
Nelms David C.
Nguyen Hien
Schneck Thomas
Yee George B. F.
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