Memory device having A P+ gate and thin bottom oxide and...

Details Memory device having A P+ gate and thin bottom oxide and... Memory device having A P+ gate and thin bottom oxide and...

2005-04-26

2005-04-26

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

06885590

ABSTRACT:
A non-volatile memory device includes a semiconductor substrate and an N-type source and drain within the substrate. An oxide-nitride-oxide (ONO) stack is formed over the substrate. The ONO stack includes a thin bottom oxide layer. A P+polysilicon electrode is formed over the ONO stack. The memory device is operative to perform a channel erase operation in which a pair of charge storing cells with the nitride layer are erased simultaneously.

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