Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-09-02
2008-09-02
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S203000
Reexamination Certificate
active
11552472
ABSTRACT:
Improved circuitry and methods for programming memory cells of a memory device are disclosed. The improved circuitry and methods operate to isolate the memory cells from potentially damaging electrical energy that can be imposed during a precharge phase that precedes programming of the memory cells. Additionally, the improved circuitry and methods can operate to ensure that programming of the memory cells is performed in a controlled manner using only a program current. The improved circuitry and methods are particularly useful for programming non-volatile memory cells. In one embodiment, the memory device pertains to a semiconductor memory product, such as a semiconductor memory chip or a portable memory card.
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Nguyen Tan T.
San Disk 3D LLC
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