Memory device electrode with a surface structure

Details Memory device electrode with a surface structure Memory device electrode with a surface structure

2008-07-29

2008-07-29

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S739000, C257S001000, C257SE21012, C257SE21020, C257SE29112, C438S613000

Reexamination Certificate

active

07405418

ABSTRACT:
The invention relates to a memory device electrode, in particular for a resistively switching memory device, wherein the surface of the electrode is provided with a structure, in particular comprises one or a plurality of shoulders or projections, respectively. Furthermore, the invention relates to a memory cell comprising at least one such electrode, a memory device, as well as a method for manufacturing a memory device electrode.

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