Memory device and sense amplifier control device

Static information storage and retrieval – Addressing – Plural blocks or banks

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36523002, 36523008, 365205, 36518505, G11C 800

Patent

active

059109270

ABSTRACT:
A memory device having a smaller circuit area but efficiently used is provided. A plurality of main word lines (MWL) extending in a row direction are connected through respective bank latches (BL) to a single global word line (GWL) extending across banks (BANK0, BANK1). Selective activation of an enable signal (BLE) and the global word line (GWL) selects one of the bank latches (BL) to selectively activate an associated main word line (MWL). This state is held by the selected bank latch (BL) after the enable signal (BLE) is inactivated. Then, another enable signal (BLE) is activated to selectively activate another main word line (MWL). Sub-decoders (SD) connected to the main word lines (MWL) are selected independently of each other to independently activate word lines (WL) for each bank (BANK).

REFERENCES:
patent: 4685088 (1987-08-01), Iannucci
patent: 4825410 (1989-04-01), Lee
patent: 5007024 (1991-04-01), Tanaka et al.
patent: 5479374 (1995-12-01), Kobayashi et al.
patent: 5495454 (1996-02-01), Fukuzo
patent: 5553026 (1996-09-01), Nakai et al.
patent: 5555523 (1996-09-01), Haga et al.
patent: 5636174 (1997-06-01), Rao
patent: 5748553 (1998-05-01), Kitamura
Yasuhiko Nitta, et al., "A 1.6 GB/s Data-Rate 1Gb Synchronous DRAM With Hierarchical Square-Shaped Memory Block and Distributed Bank Architecture", ISSCC Digest of Technical Papers, IEEE (1996) pp. 376-377.
Jei-Hwan Yoo, et al., "A 32-Bank 1Gb DRAM With 1GB/s Bandwidth ", ISSCC Digest of Technical Papers, IEEE (1996) pp. 378-379.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory device and sense amplifier control device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device and sense amplifier control device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and sense amplifier control device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1686667

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.