Memory device and sense amplifier circuit with faster...

Details Memory device and sense amplifier circuit with faster... Memory device and sense amplifier circuit with faster...

2008-01-08

2008-01-08

Dinh, Son (Department: 2824)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S189090, C365S107000, C365S210130

Reexamination Certificate

active

11257255

ABSTRACT:
A sense amplifier circuit with faster sensing speed and improved insensitivities to fabrication process variations (i.e., eliminated functional failures) is provided herein. According to one embodiment, the sense amplifier circuit associated with a row of memory cells within a memory device may include a charging portion, which is coupled for receiving a reference voltage that is supplied to at least one additional sense amplifier circuit within the memory device. The reference voltage is provided by a current reference generator, which is coupled to the sense amplifier circuit(s) for detecting: (i) a maximum amount of current that can pass through one compare stack within the memory cell array, or (ii) a difference between the maximum amount of current and the current contribution of an n-channel current source within the sense amplifier circuit. A memory device and method of operating one embodiment of the improved sense amplifier circuit are also provided herein.

REFERENCES:
patent: 5428565 (1995-06-01), Shaw
patent: 6744653 (2004-06-01), Huang

Affiliated with

Also associated with

Rating

Memory device and sense amplifier circuit with faster... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device and sense amplifier circuit with faster..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and sense amplifier circuit with faster... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3954881