Memory device and semiconductor device

Details Memory device and semiconductor device Memory device and semiconductor device

2007-04-23

2010-12-28

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S004000, C257S005000, C438S029000, C438S069000

Reexamination Certificate

active

07858972

ABSTRACT:
A memory device capable of data writing at a time other than during manufacturing is provided by using a memory element including an organic material. In a memory cell, a third conductive film, an organic compound, and a fourth conductive film are stacked over a semiconductor film provided with an n-type impurity region and a p-type impurity region, and a pn-junction diode is serially connected to the memory element. A logic circuit for controlling the memory cell includes a thin film transistor. The memory cell and the logic circuit are manufactured over one substrate at the same time. The n-type impurity region and the p-type impurity region of the memory cell are manufactured at the same time as the impurity region of the thin film transistor.

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“RFID Tags Become Target for Hacker,” http://japan.cnet.com
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