Memory device and methods of using and making the device

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C438S102000

Reexamination Certificate

active

10818261

ABSTRACT:
A memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active low conductive layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.

REFERENCES:
patent: 4663270 (1987-05-01), Potember et al.
patent: 5589692 (1996-12-01), Reed
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6208553 (2001-03-01), Gryko et al.
patent: 6212093 (2001-04-01), Lindsey
patent: 6272038 (2001-08-01), Clausen et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6320200 (2001-11-01), Reed et al.
patent: 6324091 (2001-11-01), Gryko et al.
patent: 6348700 (2002-02-01), Ellenbogen et al.
patent: 2003/0053350 (2003-03-01), Krieger et al.
patent: WO 02/43071 (2002-05-01), None
patent: WO 02/091384 (2002-11-01), None
International Search Report for PCT/US04/015945, Nov. 19, 2004.

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