Memory device and methods for fabricating and operating the...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185180, C257S311000

Reexamination Certificate

active

08072803

ABSTRACT:
The memory device is described, which includes a substrate, a conductive layer, a charge storage layer, a plurality of first doped regions and a plurality of second doped regions. The substrate has a plurality of trenches formed therein. The conductive layer is disposed on the substrate and fills the trenches. The charge storage layer is disposed between the substrate and the conductive layer. The first doped regions are configured in the substrate adjacent to both sides of an upper portion of each trench, respectively. The first doped regions between the neighbouring trenches are separated from each other. The second doped regions are configured in the substrate under bottoms of the trenches, respectively. The second doped regions and the first doped regions are separated from each other, such that each memory cell includes six physical bits.

REFERENCES:
patent: 6674132 (2004-01-01), Willer
patent: 6987298 (2006-01-01), Lee et al.
patent: 2007/0093023 (2007-04-01), Wu
patent: 2007/0105308 (2007-05-01), Hosaka et al.
patent: 2008/0217673 (2008-09-01), Maruyama et al.
patent: 2009/0039405 (2009-02-01), Cheng et al.
patent: 1953183 (2007-04-01), None
patent: 1979865 (2007-06-01), None
patent: I278988 (2007-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory device and methods for fabricating and operating the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device and methods for fabricating and operating the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and methods for fabricating and operating the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4297884

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.