Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2006-06-13
2006-06-13
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S258000, C438S954000
Reexamination Certificate
active
07060594
ABSTRACT:
A method for manufacturing a charge storage stack including a bottom dielectric layer, a charge trapping structure on the bottom dielectric layer, and a top dielectric layer, each comprising silicon oxynitride, are formed using reactant gases that comprise hydrogen, where the hydrogen comprises at least 90 percent deuterium isotope. The bottom dielectric layer, charge trapping structure, and top dielectric layer each have respective relative concentrations of oxygen and nitrogen. The relative concentration of nitrogen in the charge trapping structure is high enough for the material to act as a charge trapping structure with an energy gap that is lower than the energy gaps in the bottom dielectric layer and the top dielectric layer. The presence of oxygen in the charge trapping structure reduces the number of available dangling bonding sites, and thereby reduces the number of hydrogen inclusions in the structure.
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Haynes Mark A.
Haynes Beffel & Wolfeld
Macronix International Co. Ltd.
Nhu David
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