Memory device and method of making same

Details Memory device and method of making same Memory device and method of making same

2011-03-08

2011-03-08

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000

Reexamination Certificate

active

07902536

ABSTRACT:
A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a substantially planar first area of electrical communication with the phase-change material. The radial memory device also includes a second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, the second area being laterally spacedly disposed from the first area and substantially circumscribing the first area.Further, a method of making a memory device is disclosed. The steps include depositing a first electrode, depositing a first insulator, configuring the first insulator to define a first opening. The first opening provides for a generally planar first contact of the first electrode. The method further including the steps of depositing a phase-change material, depositing a second insulator, configuring the second insulator, depositing a second electrode having a second contact laterally displaced from said first contact, and configuring said second electrode.

REFERENCES:
patent: 6867425 (2005-03-01), Wicker
patent: 2002/0168852 (2002-11-01), Harshfield et al.
patent: 2005/0029503 (2005-02-01), Johnson

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