Memory device and a semiconductor device

Details Memory device and a semiconductor device Memory device and a semiconductor device

2011-05-03

2011-05-03

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S080000, C257SE51013, C257SE51018, C257SE51026

Reexamination Certificate

active

07935957

ABSTRACT:
The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.

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Office Action (Application No. 200610111049.X) Dated Apr. 3, 2009.

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