Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-05-03
2011-05-03
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S080000, C257SE51013, C257SE51018, C257SE51026
Reexamination Certificate
active
07935957
ABSTRACT:
The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.
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Office Action (Application No. 200610111049.X) Dated Apr. 3, 2009.
Lulis Michael
Phung Anh
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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