Memory device

Details Memory device Memory device

2006-04-11

2006-04-11

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S448000, C257S459000

Reexamination Certificate

active

07026702

ABSTRACT:
Systems and methodologies for fabrication of a memory cell or array are disclosed. The memory cell employs a functional zone with passive and active layers. Such passive and active layers facilitate electron migration, and allow a plurality of states for the memory cell. A memory device formed in accordance with the disclosed methodology can include a top-electrode formed over the functional layer, which in turn over lays a lower conductive layer.

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