Memory device

Details Memory device Memory device

2011-03-15

2011-03-15

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

07906772

ABSTRACT:
A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.

REFERENCES:
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2002/0045323 (2002-04-01), Lowrey et al.
patent: 2009/0095949 (2009-04-01), Kostylev et al.
“Conformal” Merriam-Webster Online Dictionary. 2007, http://www.merriam-webster.com (Apr. 11, 2010).

Affiliated with

Also associated with

Rating

Memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2721848