Memory device

Details Memory device Memory device

2004-12-20

2010-11-16

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S042000, C257SE27004, C257SE45002, C365S148000, C365S046000

Reexamination Certificate

active

07834337

ABSTRACT:
A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher.The memory layer is used which has a content of Zn or Cd of 20 at % or more and 50 at % or less, a content of Ge or Sb of 5 at % or more and 25 at % or less, and a content of Te of 40 at % or more and 65 at % or less in Zn-Ge-Te.

REFERENCES:
patent: 4475178 (1984-10-01), Kinoshita
patent: 4529991 (1985-07-01), Wada et al.
patent: 5225273 (1993-07-01), Mikoshiba et al.
patent: 5278011 (1994-01-01), Yamada et al.
patent: 5644416 (1997-07-01), Morikawa et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6625848 (2003-09-01), Schneider
patent: 7335907 (2008-02-01), Terao et al.
patent: 2004/0178402 (2004-09-01), Ovshinsky et al.

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