Memory device

Details Memory device Memory device

2008-11-25

2010-12-14

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Powering

Conservation of power

C365S154000

Reexamination Certificate

active

07852700

ABSTRACT:
A memory device includes a power supply line, a memory cell, a memory cell power supply node provided between the memory cell and the power supply line, a first voltage generating circuit coupled to the memory cell power supply node for supplying the memory cell power supply node with a first potential lower than a potential of the power supply line for a first period corresponding to at least a part of a writing operation period, and a second voltage generating circuit that is coupled to the memory cell power supply node for supplying the memory cell power supply node with a second potential lower than the potential of the power supply line for a second period corresponding to at least a part of the writing operation period.

REFERENCES:
patent: 2006/0262628 (2006-11-01), Nii et al.
patent: 2008/0055967 (2008-03-01), Houston et al.
patent: 2002-042476 (2002-02-01), None
patent: 2007-004960 (2007-01-01), None
S. Ohbayashi et al, “A 65 nm SoC Embedded 6T-SRAM Design for Manufacturing with Read and Write Cell Stabilizing Circuits”, Jun. 15, 2006, Hyogo, Japan.

Affiliated with

Also associated with

Rating

Memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4170959