Memory defect detection and self-repair technique

Details Memory defect detection and self-repair technique Memory defect detection and self-repair technique

2007-02-13

2007-02-13

Tran, M. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S200000

Reexamination Certificate

active

10791188

ABSTRACT:
According to some embodiments, a memory device having multiple memory units includes one or more redundant memory units. Upon detection of an electrical characteristic indicating a failing memory unit, one of the redundant memory units is used to replace the failing memory unit. Detection of failing memory units may be via current, voltage and/or resistance monitoring. If the electrical characteristic monitored exceeds a predetermined threshold, a memory unit is considered failing. The failing memory unit is removed from further use. The redundant memory unit is programmed to be accessible at the memory address of the removed memory unit. Replacement occurs automatically (that is, without user intervention).

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