Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-09-07
2010-10-19
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170, C365S185180, C365S189011, C365S189160
Reexamination Certificate
active
07817467
ABSTRACT:
Self-calibration for a memory controller is performed by writing a voltage to a selected cell. Adjacent cells around the selected cell are programmed. After each of the adjacent programming operations, the voltage on the selected cell is read to determine any change in voltage caused by systemic offsets such as, for example, floating gate-to-floating gate coupling. These changes are averaged and stored in a table as an offset for use in adjusting a programming voltage or a read voltage in a particular area of memory represented by the offset. Self calibration method for temperature is determined by writing cells at different temperatures and reading at different temperatures to generate temperature offset tables for the write path and read path. These offset tables are used to adjust for systematic temperature related offsets during programming and during read.
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Hoei Jung-Sheng
Roohparvar Frankie F.
Sarin Vishal
Le Toan
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Nguyen Tuan T
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