Memory configuration of a composite memory device

Static information storage and retrieval – Floating gate – Particular biasing

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36518529, 36518904, 365218, G11C 1604

Patent

active

061152927

ABSTRACT:
The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.

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Atmel, 4 Megabit 5-volt Flash with 265K E.sup.2 PROM Memory, AT29C432 Concurrent Flash, pp. 1-11.

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