Memory component with memory cells having changeable...

Details Memory component with memory cells having changeable... Memory component with memory cells having changeable...

2005-08-29

2010-06-15

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S774000, C257SE45002, C438S102000, C438S602000, C438S900000

Reexamination Certificate

active

07737428

ABSTRACT:
The invention relates to a memory component having memory cells based on an active solid electrolyte material which can be changed in terms of its resistance value. The active solid electrolyte material is embedded between a bottom and top electrode, can be switched between an on state with a low resistance and an off state with a high resistance by comparison therewith by application of a suitable electric field between said electrodes. A resistance material is embedded in parallel with the solid electrolyte material between the electrodes.

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