Memory clock pulse generating circuit with reduced peak current

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307601, 307603, 307584, 307578, 307268, 307262, 377 68, H03K 5135, H03K 1728, H03K 17687, G11C 1900

Patent

active

046441840

ABSTRACT:
A dynamic type semiconductor memory device having refreshing function includes a clock pulse generating circuit having a row clock pulse generating section which includes a plurality of cascade-connected delay circuits, a plurality of MOS transistors selectively connected between said delay circuits, and a gate control circuit for changing conduction resistances of the MOS transistors according to the level of a refreshing signal.

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Makoto Taniguchi et al., "Fully Boosted 64K Dynamic RAM with Automatic and Self-Refresh," IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, Oct. 1981.

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