Static information storage and retrieval – Read only systems – Semiconductive
Reexamination Certificate
2009-11-12
2011-11-22
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read only systems
Semiconductive
C365S103000, C365S114000, C365S072000, C365S027000
Reexamination Certificate
active
08064239
ABSTRACT:
Data is stored in a quantum-well type structure with double gate control. According to an example embodiment, a transistor-based data storage circuit includes a gate, a back gate and a semiconductor channel between the gate and the back gate. Carriers are stored in a storage pocket structure in the channel, in response to biases applied to the gate and back gate. Current passing through the channel is sensed and used to detect the stored carriers and, correspondingly, a memory state of the storage circuit.
REFERENCES:
patent: 7047391 (2006-05-01), Dally et al.
patent: 7216214 (2007-05-01), Dally et al.
patent: 2008/0316828 (2008-12-01), Hanafi et al.
Erotsun, M. Gunhan;, Kapur, Pawan; Saraswat, Krishna C., “A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM,” IEEE Device Letters, 2008.
Ertosun Mehmet Günhan
Kapur Pawan
Saraswat Krishna Chandra
Crawford & Maunu PLLC
Le Thong Q
The Board of Trustees of the Leland Stanford Junior University
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