Memory circuit with pumped voltage for erase and program operati

Details Memory circuit with pumped voltage for erase and program operati Memory circuit with pumped voltage for erase and program operati

1992-02-14

1994-05-17

LaRoche, Eugene R.

Static information storage and retrieval

Powering

365218, 36518901, 365900, G11C 1602

Patent

active

053134290

ABSTRACT:
A memory device is disclosed that employs hot electron injection for programming operations and Fowler-Nordheim tunneling for erase operations. The memory device requires only a single 5 volt power supply and does not require an external high voltage supply for program or erase operations. The memory device includes a charge pump section that internally generates the high voltage required for programming and erase operations. The same charge pump section is used for both program and erase power requirements.

REFERENCES:
patent: 4638464 (1987-01-01), Cranford, Jr. et al.
patent: 4667312 (1987-05-01), Doung et al.
patent: 5034926 (1991-07-01), Taura et al.
patent: 5216588 (1993-06-01), Bajwa et al.

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