Memory circuit having memory cells which have a resistance...

Details Memory circuit having memory cells which have a resistance... Memory circuit having memory cells which have a resistance...

2007-07-31

2007-07-31

Phan, Trong (Department: 2827)

Static information storage and retrieval

Read only systems

Resistive

C365S148000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

11213372

ABSTRACT:
In a memory circuit having memory cells which are connected in series between a ground line PL and a bit line BL and in each case have a resistance memory element said element having a bipolar switching behavior having an anode electrode and a cathode electrode, and a drive transistor connected in parallel with the resistance memory element, the drive transistors of the memory cells in each case are connected to a word line in order to switch the drive transistor on and off in such a way that a current path is formed via the associated drive transistor in a non-activated state of a memory cell and a current path is formed via the associated resistance memory element in an activated state of a memory cell, a first changeover switch being arranged at one end and a second changeover switch at other ends of the series of memory cells in order alternately to produce a connection between the series-connected memory cells and the ground line and the bit line in a manner dependent on an applied address.

REFERENCES:
patent: 6795329 (2004-09-01), Jacob
patent: 7068533 (2006-06-01), Ferrant et al.
patent: WO2004001760 (2003-12-01), None
patent: WO2004017328 (2004-02-01), None

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