Memory circuit having improved sense-amplifier block and method

Details Memory circuit having improved sense-amplifier block and method Memory circuit having improved sense-amplifier block and method

1998-08-28

2000-08-29

Hoang, Huan

Static information storage and retrieval

Format or disposition of elements

365 63, 365205, G11C 502

Patent

active

061117730

ABSTRACT:
A memory circuit includes first and second amplifier stages that are respectively located within first and second regions of a semiconductor structure, and a memory array that is also located in the semiconductor structure. The memory circuit also includes a first set of digit lines that is coupled to the memory array, extends from the memory array into the first region, and is coupled to the first amplifier stage. The memory circuit further includes a second set of digit lines that is coupled to the memory array, extends from the memory array through the first region and into the second region, is coupled to the second amplifier stage, and is electrically isolated from the first amplifier stage.

REFERENCES:
patent: 4825417 (1989-04-01), Seo
patent: 4903344 (1990-02-01), Inoue
patent: 4922459 (1990-05-01), Hidaka
patent: 5644525 (1997-07-01), Takashima et al.
patent: 5859805 (1999-01-01), Takashima et al.

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