Memory circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307255, 307288, 307300, H03K 1700, G11C 1140

Patent

active

040314120

ABSTRACT:
A memory circuit comprises a semiconductor element circuit having equivalently a PNPN four-layer structure, at least an NPN transistor and a diode. An N-type emitter of the semiconductor element circuit is connected to the base of the NPN transistor, while a P-type base of the circuit is connected to the collector of the NPN transistor through the diode. The semiconductor element circuit has a positive feedback loop which is additionally provided with another feedback loop extending across the P-type base and the N-type emitter of the semiconductor element circuit, whereby in the ON holding state of the memory circuit the semiconductor element circuit is operated as a current stabilizing circuit and the transistor included in the additional feedback loop is stabilized in a controlled staturation state. The memory circuit can thus be operated at a high speed with a low power consumption.

REFERENCES:
patent: 3105158 (1963-09-01), Nichols
patent: 3343104 (1967-09-01), Motto Jr.
patent: 3569945 (1971-03-01), Ho

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-738744

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.