Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1975-12-23
1977-06-21
Miller, Jr., Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307255, 307288, 307300, H03K 1700, G11C 1140
Patent
active
040314120
ABSTRACT:
A memory circuit comprises a semiconductor element circuit having equivalently a PNPN four-layer structure, at least an NPN transistor and a diode. An N-type emitter of the semiconductor element circuit is connected to the base of the NPN transistor, while a P-type base of the circuit is connected to the collector of the NPN transistor through the diode. The semiconductor element circuit has a positive feedback loop which is additionally provided with another feedback loop extending across the P-type base and the N-type emitter of the semiconductor element circuit, whereby in the ON holding state of the memory circuit the semiconductor element circuit is operated as a current stabilizing circuit and the transistor included in the additional feedback loop is stabilized in a controlled staturation state. The memory circuit can thus be operated at a high speed with a low power consumption.
REFERENCES:
patent: 3105158 (1963-09-01), Nichols
patent: 3343104 (1967-09-01), Motto Jr.
patent: 3569945 (1971-03-01), Ho
Ohhinata Ichiro
Okuhara Shinzi
Davis B. P.
Hitachi , Ltd.
Miller, Jr. Stanley D.
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