Memory cells with power switch circuit for improved low...

Details Memory cells with power switch circuit for improved low... Memory cells with power switch circuit for improved low...

2011-01-18

2011-01-18

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Powering

C365S228000, C365S154000

Reexamination Certificate

active

07872935

ABSTRACT:
Static random access memory (SRAM) cells and methods of operation are provided which may be used to provide improved writeability and stability to support low voltage operation of memory devices. For example, in one implementation, by temporarily interrupting the connection between portions of an SRAM cell and a power source such as a reference voltage or current source, the writeability of SRAM cells can be improved. Additional read port implementations are also provided to facilitate low voltage operation. In another implementation, a power switch circuit responsive to a word line and logic signals may be used to provide such interruptions.

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International Preliminary Report on Patentability and the Written Opinion of The International Searching Authority issued for International Application No. PCT/US2008/069475, mailed Jan. 21, 2010, 5 pages.

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