Memory cell with thick oxide at least as deep as channel stop

Details Memory cell with thick oxide at least as deep as channel stop Memory cell with thick oxide at least as deep as channel stop

1981-11-09

1984-12-18

Edlow, Martin H.

357 13, 357 45, 357 52, H01L 2978, H01L 2990, H01L 2710, H01L 2934

Patent

active

044893388

ABSTRACT:
In a dynamic memory cell, the mutual cross-talk is considerably reduced by providing a diffused selection line below a layer of thick oxide (for example, LOCOS). As a result of this the capacitive coupling with other selection lines is considerably reduced, as is the capacity of the selection line with respect to channel stopping regions provided between the memory cells.

REFERENCES:
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3936858 (1976-02-01), Seeds et al.
patent: 3997799 (1976-12-01), Baker
patent: 4135289 (1979-01-01), Brews et al.
patent: 4240092 (1980-12-01), Kuo
patent: 4251571 (1981-02-01), Garbarino et al.
patent: 4373248 (1983-02-01), McElroy
patent: 4392210 (1983-07-01), Chan

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