Memory cell with non-destructive one-time programming

Details Memory cell with non-destructive one-time programming Memory cell with non-destructive one-time programming

2006-09-19

2006-09-19

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read only systems

Resistive

C365S148000

Reexamination Certificate

active

07110277

ABSTRACT:
A one-time programmable memory cell and the programming thereof including a programming transistor which is disposed in series with a polycrystalline silicon programming resistor forming the memory element. The programming is non-destructive with respect to the polycrystalline silicon resistor.

REFERENCES:
patent: 3863231 (1975-01-01), Taylor
patent: 4132904 (1979-01-01), Harari
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4175290 (1979-11-01), Harari
patent: 4342102 (1982-07-01), Puar
patent: 4399372 (1983-08-01), Tanimoto et al.
patent: 4404581 (1983-09-01), Tam et al.
patent: 4449203 (1984-05-01), Adlhoch
patent: 4476478 (1984-10-01), Noguchi et al.
patent: 4503518 (1985-03-01), Iwahasih
patent: 4565712 (1986-01-01), Noguchi et al.
patent: 5334880 (1994-08-01), Abadeer et al.
patent: 5418738 (1995-05-01), Abadeer et al.
patent: 5504760 (1996-04-01), Harari et al.
patent: 5606523 (1997-02-01), Mirabel
patent: 5689455 (1997-11-01), Mullarkey et al.
patent: 5761118 (1998-06-01), Chai
patent: 5784314 (1998-07-01), Sali et al.
patent: 5926409 (1999-07-01), Engh et al.
patent: 5936880 (1999-08-01), Payne
patent: 6191989 (2001-02-01), Luk et al.
patent: 6198678 (2001-03-01), Albon et al.
patent: 7002829 (2006-02-01), Singh et al.
patent: 7009891 (2006-03-01), Chen et al.
patent: 2002/0074616 (2002-06-01), Chen et al.
patent: 2006/0056222 (2006-03-01), Reiner
patent: 2 523 357 (1983-09-01), None
patent: 54 098536 (1979-08-01), None
International Search Report from co-pending PCT application No. PCT/FR03/00446, filed Feb. 11, 2003.
International Search Report from PCT application No. PCT/FR03/00447, filed Feb. 11, 2003.

Affiliated with

Also associated with

Rating

Memory cell with non-destructive one-time programming does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell with non-destructive one-time programming, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell with non-destructive one-time programming will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3591353