Memory cell with memory element contacting ring-shaped upper...

Details Memory cell with memory element contacting ring-shaped upper... Memory cell with memory element contacting ring-shaped upper...

2011-06-07

2011-06-07

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257SE29002, C257SE29003, C257SE47001

Reexamination Certificate

active

07956344

ABSTRACT:
A memory cell includes a bottom electrode, a top electrode and a memory element switchable between electrical property states by the application of energy. The bottom element includes lower and upper parts. The upper part has a generally ring-shaped upper end surrounding a non-conductive central region. The lateral dimension of the lower part is longer, for example twice as long, than the lateral dimension of the ring-shaped upper end. The lower part is a non-perforated structure. The memory element is positioned between and in electrical contact with the top electrode and the ring-shaped upper end of the second part of the bottom electrode. In some examples the ring-shaped upper end has a wall thickness at the memory element of 2-10 nm. A manufacturing method is also discussed.

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