Memory cell with memory element contacting an inverted...

Details Memory cell with memory element contacting an inverted... Memory cell with memory element contacting an inverted...

2011-02-01

2011-02-01

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S097000, C438S597000, C438S699000, C257S002000, C257S003000, C257S004000, C257S005000, C257S529000, C257S755000, C257SE27004, C257SE31029, C257SE45002

Reexamination Certificate

active

07879643

ABSTRACT:
Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion having a top surface and a width less than that of the base portion. A memory element is on the top surface of the pillar portion and comprises memory material having at least two solid phases. A top electrode is on the memory element.

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