Memory cell with fuse element

Details Memory cell with fuse element Memory cell with fuse element

2005-05-24

2005-05-24

Lam, David (Department: 2818)

Static information storage and retrieval

Read only systems

Fusible

C365S225700, C365S189110

Reexamination Certificate

active

06898103

ABSTRACT:
The present invention relates to a programmable memory cell and a method of setting a state for a programmable memory cell. The memory cell includes two thin gated fuses adapted to set the state of the memory cell. A level shifter device is connected to the gated fuses and is adapted to stand off a high voltage when setting the state of the memory cell. At least one switch transistor is connected to at least the level shifter device and is adapted to select at least one of the gated fuses, enabling a high voltage to be communicated thereto, thus setting the state of the memory cell.

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