Memory cell with buffered-layer

Details Memory cell with buffered-layer Memory cell with buffered-layer

2007-08-14

2007-08-14

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Controlled by nonelectrical, nonoptical external signal

C438S003000, C257SE27006

Reexamination Certificate

active

11314222

ABSTRACT:
A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7−X(YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1−XCaXMnO3(PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.

REFERENCES:
patent: 6147922 (2000-11-01), Hurst et al.
patent: 6856536 (2005-02-01), Rinerson et al.
S.Q. Liu, “Electric-pulse-induced reversible resistance change effect in magnetioreisistive films”, Applied Physics Letters; vol. 76, No. 19, May 8, 2000, pp. 2749-2751.

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