Memory cell with an asymmetrical area

Details Memory cell with an asymmetrical area Memory cell with an asymmetrical area

2007-03-27

2007-03-27

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257S296000, C257SE21008, C257S645000, C257S662000

Reexamination Certificate

active

11174034

ABSTRACT:
An asymmetric-area memory cell, and a fabrication method for forming an asymmetric-area memory cell, are provided. The method comprises: forming a bottom electrode having an area; forming a CMR memory film overlying the bottom electrode, having an asymmetric area; and, forming a top electrode having an area, less than the bottom electrode area, overlying the CMR film. In one aspect, the CMR film has a first area adjacent the top electrode and a second area, greater than the first area, adjacent the bottom electrode. Typically, the CMR film first area is approximately equal to the top electrode area, although the CMR film second area may be less than the bottom electrode area.

REFERENCES:
patent: 5835003 (1998-11-01), Nickel et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6949435 (2005-09-01), Hsu et al.
patent: 7029924 (2006-04-01), Hsu et al.

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