Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor

Details Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor

1999-08-13

2000-09-12

Nelms, David

Static information storage and retrieval

Floating gate

36518505, 36518518, G11C 1604

Patent

active

061186910

ABSTRACT:
The unintentional programming of a memory cell having a Frohmann-Bentchkowsky p-channel memory transistor and an n-channel MOS access transistor, which can occur during a read operation when high read voltages are used, is eliminated by forming a diode-connected MOS transistor in parallel with the access transistor. The diode-connected transistor is formed to be off when an unprogrammed memory transistor is read, and to be on when a programmed memory transistor is read.

REFERENCES:
patent: 3774087 (1973-11-01), Pepper
patent: 3952325 (1976-04-01), Beale et al.
patent: 4142251 (1979-02-01), Mintz
patent: 4203158 (1980-05-01), Frohmann-Bentchkowsky
patent: 4271420 (1981-06-01), Chikamura et al.
patent: 4742491 (1988-05-01), Liang et al.
patent: 4822750 (1989-04-01), Perlegos et al.
patent: 4931847 (1990-06-01), Corda
patent: 5021848 (1991-06-01), Chiu
patent: 5251169 (1993-10-01), Josephson
patent: 5416738 (1995-05-01), Shrivastava
patent: 5557567 (1996-09-01), Bergemont et al.
patent: 5587949 (1996-12-01), Bergemont et al.
patent: 5592001 (1997-01-01), Asano
patent: 5594685 (1997-01-01), Bergemont et al.
patent: 5612914 (1997-03-01), Liu et al.
patent: 5633518 (1997-05-01), Broze
patent: 5636162 (1997-06-01), Coffman et al.
patent: 5687118 (1997-11-01), Chang
patent: 5761121 (1998-06-01), Chang
patent: 5812452 (1998-09-01), Hoang
patent: 5862082 (1999-01-01), Dejenfelt et al.
patent: 5896315 (1999-04-01), Wong
Allen, P., et al. "CMOS Analog Circuit Design," Oxford University Press, The Oxford Series in Electrical and Computer Engineering, (1987) pp. 592-601.
Frohmann-Bentchkowsky, D., "A Fully-Decoded 2048-Bit Electrically-Programmable MOS-ROM," Session VII: Memory II/Memory Circuits and Systems, 1971 IEEE International Solid-State Circuits Conference, pp. 80, 81 & 200.

Affiliated with

Also associated with

Rating

Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-101913