Memory cell using silicon carbide

Details Memory cell using silicon carbide Memory cell using silicon carbide

2006-11-07

2006-11-07

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S202000, C257S204000, C257S206000, C257S207000, C257S208000, C257S210000, C257S211000, C257S331000, C257S347000, C257S401000, C257S750000, C257S759000, C257S760000

Reexamination Certificate

active

07132751

ABSTRACT:
A memory includes an insulating layer; a plurality of spaced-apart semiconductor lines formed on the insulating layer; and a plurality of spaced-apart conductive gate lines formed on the insulating layer. Each of the gate lines is disposed to intersect the plurality of semiconductor lines at a plurality of intersections. The semiconductor lines include a plurality of body regions disposed at the intersections, with each of the body regions including a channel formed from a silicon carbide material.

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