Memory cell that employs a selectively grown reversible...

Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...

Reexamination Certificate

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C257S002000, C257SE29002, C365S163000

Reexamination Certificate

active

07824956

ABSTRACT:
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.

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