Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2007-06-29
2010-11-02
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C257S002000, C257SE29002, C365S163000
Reexamination Certificate
active
07824956
ABSTRACT:
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
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