Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-03-08
2011-03-08
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C438S102000, C438S103000
Reexamination Certificate
active
07902537
ABSTRACT:
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
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Clark Mark
Herner Brad
Schricker April
Dugan & Dugan PC
SanDisk 3D LLC
Smith Bradley K
Valentine Jami M
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