Memory cell system with first and second gates

Details Memory cell system with first and second gates Memory cell system with first and second gates

1990-07-20

1991-10-15

Mintel, William

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 54, 357 41, 365184, H01L 2968, H01L 2934, G11C 1134

Patent

active

050578855

ABSTRACT:
A memory element manufactured by a thin film forming technique is disclosed. The memory element includes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode. The gate insulating film is divided into memory and non-memory regions so that a memory transistor and a selection transistor are apparently formed in one transistor. Therefore, the element formation area of each memory element can be reduced, and the packing density can be increased.

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