Memory cell resistor device

Details Memory cell resistor device Memory cell resistor device

1981-08-14

1984-01-17

Munson, Gene M.

357 15, 357 89, H01L 2974, H01L 2948

Patent

active

044266553

ABSTRACT:
A dynamic memory cell uses a low barrier Schottky contact at a drain region to eliminate the need for an external gating diode. The drain is separated from source and injector regions by a heavily doped N+ reach through region extending to a heavily doped N+ blanket semiconductor. Holes injected into one of the separated regions are trapped by high-low junctions and are detected by sensing the source-drain current.

REFERENCES:
patent: 3868718 (1975-02-01), Arai
patent: 4328511 (1982-05-01), Tasch et al.
Arai "Charge-Storage Junction Field-Effect Transistor" IEEE Trans. Electron Devices, vol. Ed-22 (4/75) pp. 181-185.

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