Memory cell repair using fuse programming method in a flash...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185170, C365S200000

Reexamination Certificate

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11132602

ABSTRACT:
A method for repairing cells of a flash memory array includes using a fuse memory array circuit. The fuse memory cells are initially programmed. The locations of defective memory cells of the main array are determined. These locations are stored in the fuse memory cells by erasing predetermined locations in the fuse memory cell array so that the locations are programmed.

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