Memory cell programming with controlled current injection

Details Memory cell programming with controlled current injection Memory cell programming with controlled current injection

1997-04-09

1999-01-05

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518518, G11C 1604

Patent

active

058569464

ABSTRACT:
A memory with controlled gate current injection during memory cell programming wherein programming circuitry applies a time-varying voltage to a control gate of the memory cell during a programming cycle. The time-varying voltage yields a substantially constant rate of electron flow from the channel region to the floating gate during the programming cycle.

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patent: 5638320 (1997-06-01), Wong et al.
patent: 5687118 (1997-11-01), Chang

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