Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-03-04
2008-03-04
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S149000
Reexamination Certificate
active
11308710
ABSTRACT:
A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.
REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 6818967 (2004-11-01), Chen
Chen Chi-Lin
Chen Hung-Tse
Chen Yu-Cheng
Industrial Technology Research Institute
Jianq Chyun IP Office
Vu David
LandOfFree
Memory cell, pixel structure and fabrication process of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory cell, pixel structure and fabrication process of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell, pixel structure and fabrication process of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3933535