Memory cell of nonvolatile semiconductor memory device

Details Memory cell of nonvolatile semiconductor memory device Memory cell of nonvolatile semiconductor memory device

1995-05-03

1997-01-21

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular connection

36518523, G11C 1140

Patent

active

055965253

ABSTRACT:
The current paths of a plurality of floating gate type MOSFETs are series-connected to form a series circuit. The series circuit is connected at one end to receive a reference voltage, and is connected to data programming and readout circuits. In the data programming mode, electrons are discharged from the floating gate to the drain of the MOSFET or holes are injected into the drain into the floating gate. The data readout operation is effected by checking whether current flows from the other end to the one end of the series circuit or not.

REFERENCES:
patent: 4506350 (1985-03-01), Asano et al.
patent: 4601020 (1986-07-01), Arakawa et al.

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