Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-07-03
2007-07-03
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S103000
Reexamination Certificate
active
11044762
ABSTRACT:
A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising(a) a compound selected from the group consisting ofin which R1and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1and R2, R2and R3, R3and R4together may form a ring,(b) a compound of the general formula II:in which R5to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2,in which R5and R6or R7and R8together may form a ring, and optionally(c) a polymer.A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.
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Engl Reimund
Maltenberger Anna
Schumann Joerg
Sezi Recai
Walter Andreas
Dicke, Billig & Czaja PLLP
Infineon - Technologies AG
Nguyen Cuong
LandOfFree
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