Memory cell, memory device and method for the production...

Details Memory cell, memory device and method for the production... Memory cell, memory device and method for the production...

2006-04-07

2010-02-02

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S003000, C977S811000, C365S049130

Reexamination Certificate

active

07655939

ABSTRACT:
A nonvolatile memory cell, a memory device and a corresponding production method are disclosed. In one embodiment, a memory material region is in this case provided as memory element between a first electrode device and a second electrode device. The memory material region can be activated by means of at least one species. The memory material region is formed with or from a nanostructure.

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patent: 102 50 830 (2004-05-01), None
patent: 102 56 486 (2004-07-01), None

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