Memory cell having improved mechanical stability

Details Memory cell having improved mechanical stability Memory cell having improved mechanical stability

2008-04-07

2010-11-02

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C438S102000, C438S621000, C438S642000, C438S652000, C438S666000, C365S148000

Reexamination Certificate

active

07825398

ABSTRACT:
Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion and the base portion having respective outer surfaces and the pillar portion having a width less than that of the base portion. A memory element is on a top surface of the pillar portion of the bottom electrode, and a top electrode is on the memory element. A dielectric spacer contacts the outer surface of the pillar portion, the outer surface of the base portion of the bottom electrode self-aligned with an outer surface of the dielectric spacer.

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