Memory cell for associative memory

Static information storage and retrieval – Associative memories – Ferroelectric cell

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Details

365156, 36518905, 365190, G11C 1500

Patent

active

053863798

ABSTRACT:
The invention relates to a memory cell for a static associative memory comprising two arrays of transistors, a first array having a data storage function and a second array having a comparison function between the stored data item and a data item applied to the input of the cell, the comparison result being obtained on a selection line S, in which the second array (T1,T2,T3,T4) of transistors is partly formed by the transistors of the first array (T3,T4,T7,T8,T5,T6). The structure of the cell thus has reduced overall dimensions compared with known structures.

REFERENCES:
patent: 3936811 (1976-02-01), Horninger
patent: 4853892 (1989-08-01), Hori
patent: 4965767 (1990-10-01), Kinoshita et al.
patent: 5034919 (1991-07-01), Sasai et al.
patent: 5036486 (1991-07-01), Noguchi et al.
patent: 5051949 (1991-09-01), Young

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